mpn
JAN2N6766T1
brand
name: Microsemi Corporation
manufacturer
name: Microsemi Corporation
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
30A (Tc)
Drain to Source Voltage.
200 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
115 nC @ 10 V
Mfr
Microsemi Corporation
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Bulk
Package / Case
TO-254-3, TO-254AA (Str.
Power Dissipation (Max)
4W (Ta), 150W (Tc)
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
90mOhm @ 30A, 10V
Series
Military, MIL-PRF-19500.
Supplier Device Package
TO-254AA
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
4V @ 250?A