Attributes

Key Value
CaseTO220-3
Drain current11A
Drain-source voltage950V
Features of semiconduct.ESD protected gate
Gate-source voltage?30V
Kind of channelenhanced
Kind of packagetube
ManufacturerSTMicroelectronics
MountingTHT
On-state resistance330m?
Polarisationunipolar
Power dissipation250W
Pulsed drain current70A
TechnologySuperMESH5?
Type of transistorN-MOSFET
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