mpn
IPD30N03S2L10ATMA1
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Base Product Number
IPD30N03
Category
Discrete Semiconductor .
Current - Continuous Dr.
30A (Tc)
Drain to Source Voltage.
30 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
42 nC @ 10 V
Input Capacitance (Ciss.
1200 pF @ 25 V
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-252-3, DPak (2 Leads.
Part Status
Active
Power Dissipation (Max)
100W (Tc)
Rds On (Max) @ Id, Vgs
10mOhm @ 30A, 10V
Series
OptiMOS?
Supplier Device Package
PG-TO252-3-11
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
2V @ 50?A