VISHAY SILICONIX SI7450DP-T1-E3 N CH MOSFET

mpnSI7450DP-T1-E3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

VISHAY SILICONIX SI7450DP-T1-E3 N CH MOSFET

VISHAY SILICONIX SI7450DP-T1-E3 N CH MOSFET

zoom

Manufacturer: VISHAY SILICONIX
Label: VISHAY SILICONIX

Attributes

Key	Value
Base Product Number	SI7450
Category	Discrete Semiconductor .
Channel Type	N
Configuration	Quad Drain ; Triple Sou.
Current - Continuous Dr.	3.2A (Ta)
Dimensions	5.99 x 5 x 1.07 mm
Drain Current	3.2 A
Drain to Source On Resi.	0.09 Ohms
Drain to Source Voltage	200 V
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Forward Transconductance	19 S
Forward Voltage, Diode	1.2 V
Gate Charge (Qg) (Max) .	42 nC @ 10 V
Gate to Source Voltage	?20 V
Height	0.042" (1.07mm)
Length	0.235 in
Maximum Operating Tempe.	+150 ?C
Mfr	Vishay Siliconix
Minimum Operating Tempe.	-55 ?C
Mounting Type	Surface Mount
Number of Elements per .	1
Number of Pins	8
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? SO-8
Package Type	PowerPAK-SO-8
Part Status	Active
Power Dissipation	1.9 W
Power Dissipation (Max)	1.9W (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	80mOhm @ 4A, 10V
Series	TrenchFET?, SI74 Series
Supplier Device Package	PowerPAK? SO-8
Technology	MOSFET (Metal Oxide)
Temperature Operating R.	-55 to +150 ?C
Turn Off Delay Time	32 ns
Turn On Delay Time	14 ns
Typical Gate Charge @ V.	34 nC @ 10 V
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 250?A
Width	0 in

All Prices

Img	Seller	Supplier SKU	Min Price	MOQ	In Stock	Lead Time	Brand	Weight	Preferred Tier
	Hotenda	H1807292	0.9369	1	9000		Vishay/Siliconix		0.9369 @ 1
	Future Electronics	3860921	1.356	3000	88		Vishay		1.356 @ 3000
	us.rs-online.com	70026272	1.6	3000	62		Siliconix / Vishay		1.6 @ 3000
	Newark	06J8151	1.72	3000	58		VISHAY		1.72 @ 3000
	Digi-Key	1764961	3.636	1	62		Vishay Siliconix		3.636 @ 1

As an Amazon Associate I earn from qualifying purchases.

1759975641.0806