mpn
IPB70N10S312ATMA1
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Base Product Number
IPB70N10
Category
Discrete Semiconductor .
Current - Continuous Dr.
70A (Tc)
Drain to Source Voltage.
100 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
66 nC @ 10 V
Input Capacitance (Ciss.
4355 pF @ 25 V
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-263-3, D?Pak (2 Lead.
Part Status
Active
Power Dissipation (Max)
125W (Tc)
Rds On (Max) @ Id, Vgs
11.3mOhm @ 70A, 10V
Series
OptiMOS?
Supplier Device Package
PG-TO263-3-2
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
4V @ 83?A