Attributes

Key Value
Base Product NumberIPB70N10
CategoryDiscrete Semiconductor .
Current - Continuous Dr.70A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .66 nC @ 10 V
Input Capacitance (Ciss.4355 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)125W (Tc)
Rds On (Max) @ Id, Vgs11.3mOhm @ 70A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 83?A
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