Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Ta)
Drain to Source Voltage.30 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6.8 nC @ 4.5 V
Input Capacitance (Ciss.1010 pF @ 10 V
MfrRenesas Electronics Ame.
Mounting TypeSurface Mount
Operating Temperature-
PackageBulk
Package / Case8-SOIC (0.154", 3.90mm .
Part StatusObsolete
Power Dissipation (Max)-
Rds On (Max) @ Id, Vgs11.7mOhm @ 5.5A, 10V
Series-
Supplier Device Package8-SOP
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-
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