mpn
SIHB23N60E-GE3
brand
name: Vishay Siliconix
manufacturer
name: Vishay Siliconix
Attributes
Key
Value
Base Product Number
SIHB23
Category
Discrete Semiconductor .
Current - Continuous Dr.
23A (Tc)
Drain to Source Voltage.
600 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
95 nC @ 10 V
Input Capacitance (Ciss.
2418 pF @ 100 V
Mfr
Vishay Siliconix
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tube
Package / Case
TO-263-3, D?Pak (2 Lead.
Part Status
Active
Power Dissipation (Max)
227W (Tc)
Rds On (Max) @ Id, Vgs
158mOhm @ 12A, 10V
Series
-
Supplier Device Package
D?PAK (TO-263)
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?30V
Vgs(th) (Max) @ Id
4V @ 250?A