Infineon IRF7341QPBF

mpnIRF7341QPBF
brandname: Infineon
manufacturername: Infineon

Attributes

Key	Value
Channel Type	N
Configuration	Dual Drain
Dimensions	5.00 x 4.00 x 1.50 mm
Drain Current	5.1 A
Drain to Source On Resi.	0.065 ?
Drain to Source Voltage	55 V
Forward Transconductance	10.4 S
Forward Voltage, Diode	1.2 V
Gate to Source Voltage	?20 V
Height	0.059" (1.5mm)
Input Capacitance	780 pF @ 25 V
Length	0.196" (5mm)
Maximum Operating Tempe.	+175 ?C
Minimum Operating Tempe.	-55 ?C
Mounting Type	Surface Mount
Number of Elements per .	2
Number of Pins	8
Package Type	SO-8
Polarization	Dual N-Channel
Power Dissipation	2.4 W
Product Header	Hexfet? Power MOSFET
Series	HEXFET Series
Temperature Operating R.	-55 to +175 ?C
Total Gate Charge	29 nC
Turn Off Delay Time	31 ns
Turn On Delay Time	9.2 ns
Typical Gate Charge @ V.	29 nC @ 10 V
Voltage, Breakdown, Dra.	55 V
Width	0.157" (4mm)

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