Attributes

Key Value
Base Product NumberIRF6645
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5.7A (Ta), 25A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .20 nC @ 10 V
Input Capacitance (Ciss.890 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseDirectFET? Isometric SJ
Part StatusActive
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs35mOhm @ 5.7A, 10V
SeriesHEXFET?
Supplier Device PackageDIRECTFET? SJ
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.9V @ 50?A
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