Attributes

Key Value
Base Product NumberSTP19N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.19A (Tc)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .40 nC @ 10 V
Input Capacitance (Ciss.1000 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusObsolete
Power Dissipation (Max)125W (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 9.5A, 10V
SeriesPowerMESH?
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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