NXP USA Inc. IRFR220,118

mpnIRFR220,118
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Current - Continuous Dr.	4.8A (Tc)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	14 nC @ 10 V
Input Capacitance (Ciss.	280 pF @ 25 V
Mfr	NXP USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Obsolete
Power Dissipation (Max)	42W (Tc)
Rds On (Max) @ Id, Vgs	800mOhm @ 2.9A, 10V
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A

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