Attributes

Key Value
Base Product NumberNP60N04
CategoryDiscrete Semiconductor .
Current - Continuous Dr.60A (Tc)
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .63 nC @ 10 V
Input Capacitance (Ciss.3680 pF @ 25 V
MfrRenesas Electronics Ame.
Mounting TypeThrough Hole
Operating Temperature175?C (TJ)
PackageBulk
Package / CaseTO-262-3 Full Pack, I?P.
Part StatusLast Time Buy
Power Dissipation (Max)1.8W (Ta), 105W (Tc)
Rds On (Max) @ Id, Vgs4.3mOhm @ 30A, 10V
Series-
Supplier Device PackageTO-262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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