STMicroelectronics SCTW40N120G2V

mpnSCTW40N120G2V
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	36A (Tc)
Drain to Source Voltage.	1200 V
Drive Voltage (Max Rds .	18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	61 nC @ 18 V
Input Capacitance (Ciss.	1233 pF @ 800 V
Mfr	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 200?C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	278W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 18V
Series	-
Supplier Device Package	HiP247?
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	4.9V @ 1mA

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