Vishay Siliconix SI7898DP-T1-GE3

mpnSI7898DP-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Base Product Number	SI7898
Category	Discrete Semiconductor .
Current - Continuous Dr.	3A (Ta)
Drain to Source Voltage.	150 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	21 nC @ 10 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? SO-8
Power Dissipation (Max)	1.9W (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	85mOhm @ 3.5A, 10V
Series	TrenchFET?
Supplier Device Package	PowerPAK? SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A

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