Infineon Technologies IPP180N10N3GXKSA1

mpnIPP180N10N3GXKSA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	IPP180
Category	Discrete Semiconductor .
Current - Continuous Dr.	43A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	25 nC @ 10 V
Input Capacitance (Ciss.	1800 pF @ 50 V
Mfr	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	71W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	18mOhm @ 33A, 10V
Series	OptiMOS?
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 33?A

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