Attributes

Key Value
Base Product NumberGWM120
CategoryDiscrete Semiconductor .
Current - Continuous Dr.110A
Drain to Source Voltage.75V
FET FeatureStandard
FET Type6 N-Channel (3-Phase Br.
Gate Charge (Qg) (Max) .115nC @ 10V
Input Capacitance (Ciss.-
MfrIXYS
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / Case17-SMD, Flat Leads
Part StatusObsolete
Power - Max-
Rds On (Max) @ Id, Vgs4.9mOhm @ 60A, 10V
Series-
Supplier Device PackageISOPLUS-DIL?
Vgs(th) (Max) @ Id4V @ 1mA
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