Toshiba Semiconductor and Storage TK1R4S04PB,LXHQ

mpnTK1R4S04PB,LXHQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TK1R4S04
Category	Discrete Semiconductor .
Current - Continuous Dr.	120A (Ta)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	103 nC @ 10 V
Input Capacitance (Ciss.	5500 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	175?C
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Active
Power Dissipation (Max)	180W (Tc)
Rds On (Max) @ Id, Vgs	1.9mOhm @ 60A, 6V
Series	U-MOSIX-H
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3V @ 500?A

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