Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.35A (Tc)
Drain to Source Voltage.150 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .26 nC @ 10 V
Input Capacitance (Ciss.1750 pF @ 50 V
MfrInternational Rectifier
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-220-3
Power Dissipation (Max)144W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs39mOhm @ 21A, 10V
SeriesHEXFET?
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id5V @ 100?A
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