Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .31 nC @ 10 V
Input Capacitance (Ciss.1.7 pF @ 10 V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageBulk
Package / Case8-SMD, Flat Lead
Part StatusObsolete
Power Dissipation (Max)1.6W (Ta)
Rds On (Max) @ Id, Vgs10mOhm @ 6A, 10V
Series-
Supplier Device Package8-ECH
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id-
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