mpn
RW4E065GNTCL1
brand
name: Rohm Semiconductor
manufacturer
name: Rohm Semiconductor
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
6.5A (Ta)
Drain to Source Voltage.
30 V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
4.3 nC @ 10 V
Input Capacitance (Ciss.
260 pF @ 15 V
Mfr
Rohm Semiconductor
Mounting Type
Surface Mount
Operating Temperature
150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
6-PowerUFDFN
Part Status
Active
Power Dissipation (Max)
1.5W (Ta)
Rds On (Max) @ Id, Vgs
22.5mOhm @ 6.5A, 10V
Series
-
Supplier Device Package
DFN1616-7T
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
2.5V @ 1mA