IXYS IXTX210P10T

mpnIXTX210P10T
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Base Product Number	IXTX210
Category	Discrete Semiconductor .
Current - Continuous Dr.	210A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) .	740 nC @ 10 V
Input Capacitance (Ciss.	69500 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1040W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	7.5mOhm @ 105A, 10V
Series	TrenchP?
Supplier Device Package	PLUS247?-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?15V
Vgs(th) (Max) @ Id	4.5V @ 250?A

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