Attributes

Key Value
Base Product NumberFQPF9
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6A (Tc)
Drain to Source Voltage.250 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .38 nC @ 10 V
Input Capacitance (Ciss.1180 pF @ 25 V
Mfronsemi
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-220-3 Full Pack
Part StatusObsolete
Power Dissipation (Max)50W (Tc)
Rds On (Max) @ Id, Vgs620mOhm @ 3A, 10V
SeriesQFET?
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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