Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Tc)
Drain to Source Voltage.500 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .30 nC @ 10 V
Input Capacitance (Ciss.1800 pF @ 10 V
MfrRenesas
Mounting TypeThrough Hole
Operating Temperature150?C
PackageBulk
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)2W (Ta), 50W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs600mOhm @ 6A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id3.5V @ 1mA
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