Vishay Siliconix SQJQ160E-T1_GE3

mpnSQJQ160E-T1_GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	602A (Tc)
Drain to Source Voltage.	60 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	275 nC @ 10 V
Input Capacitance (Ciss.	16070 pF @ 25 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	PowerPAK? 8 x 8
Power Dissipation (Max)	600W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	0.85mOhm @ 20A, 10V
Series	Automotive, AEC-Q101, T.
Supplier Device Package	PowerPAK? 8 x 8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3.5V @ 250?A

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