Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2A (Tc)
Drain to Source Voltage.800 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .9.6 nC @ 10 V
Input Capacitance (Ciss.400 pF @ 100 V
MfrFairchild Semiconductor
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageBulk
Package / CaseTO-251-3 Short Leads, I.
Power Dissipation (Max)32W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs3.4Ohm @ 1A, 10V
SeriesSuperFET? II
Supplier Device PackageI-PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 200?A
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