Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.23A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .74 nC @ 5 V
Input Capacitance (Ciss.1800 pF @ 25 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)54W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs44mOhm @ 12A, 10V
SeriesHEXFET?
Supplier Device PackageTO-220AB Full-Pak
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2V @ 250?A
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