Attributes

Key Value
Base Product NumberSI7322
CategoryDiscrete Semiconductor .
Current - Continuous Dr.-
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .20 nC @ 10 V
Input Capacitance (Ciss.750 pF @ 50 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? 1212-8
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs58mOhm @ 5.5A, 10V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? 1212-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.4V @ 250?A
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