Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.44A (Tc)
Drain to Source Voltage.150V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .175nC @ 10V
Input Capacitance (Ciss.13400pF @ 25V
MfrIXYS
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Part StatusActive
Power Dissipation (Max)298W (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 22A, 10V
SeriesTrenchP?
Supplier Device PackageTO-263 (IXTA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?15V
Vgs(th) (Max) @ Id4V @ 250?A
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