Attributes

Key Value
Base Product NumberIXTP150
CategoryDiscrete Semiconductor .
Current - Continuous Dr.150A (Tc)
Drain to Source Voltage.150 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .105 nC @ 10 V
Input Capacitance (Ciss.5500 pF @ 25 V
MfrIXYS
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)480W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs7.2mOhm @ 75A, 10V
SeriesUltra X4
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 250?A
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