Attributes

Key Value
@Ic (test) (A)500m
@VCE (V)2.0
CaseSOT32
Collector Capacitance (.35 pF
Derate (Amb) (W/?C)12m
Forward Current Transfe.120
Ic Max. (A)3.0
Icbo Max. @Vcb Max. (A)100n
ManufacturerToshiba
Max. hFE240
Max. Operating Junction.150 ?C
Max. PD (W)1.5
Maximum Collector Curre.3 A
Maximum Collector Power.10 W
Maximum Collector-Base .40 V
Maximum Collector-Emitt.40 V
Maximum Emitter-Base Vo.5 V
Min hFE120
Oper. Temp (?C) Max.140
Pinout Equivalence Numb.3-10
PolarityPNP
SKU394675
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.100M
Transition Frequency (f.100 MHz
TypeTransistor Silicon PNP
Vbr CBO40
Vbr CEO40
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