Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.180mA (Ta)
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .3V, 5V
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss.85 pF @ 25 V
MfrDiodes Incorporated
Mounting TypeThrough Hole
Operating Temperature-
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-2.
Power Dissipation (Max)700mW (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs10Ohm @ 250mA, 5V
Series-
Supplier Device PackageTO-92
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id1.5V @ 1mA
prev


As an Amazon Associate I earn from qualifying purchases.

1760068079.5603