Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.78A (Tc)
Drain to Source Voltage.1000 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .744 nC @ 10 V
Input Capacitance (Ciss.20700 pF @ 25 V
MfrMicrosemi Corporation
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP6
Power Dissipation (Max)1250W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs105mOhm @ 39A, 10V
Series-
Supplier Device PackageSP6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 10mA
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