Vishay Siliconix SIR164DP-T1-GE3

mpnSIR164DP-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	50A (Tc)
Drain to Source Voltage.	30 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	123 nC @ 10 V
Input Capacitance (Ciss.	3950 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package / Case	PowerPAK? SO-8
Part Status	Active
Power Dissipation (Max)	5.2W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs	2.5mOhm @ 15A, 10V
Supplier Device Package	PowerPAK? SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A

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