Attributes

Key Value
@Ic (test) (A)1.0
@VCE (V)2.0
CaseSOT186
Collector Capacitance (.400 pF
Derate (Amb) (W/?C)16m
Forward Current Transfe.70
Ic Max. (A)10
Icbo Max. @Vcb Max. (A)1.0u
ManufacturerToshiba
Max. hFE200
Max. Operating Junction.120 ?C
Max. PD (W)2.0
Maximum Collector Curre.11 A
Maximum Collector Power.20 W
Maximum Collector-Base .50 V
Maximum Collector-Emitt.20 V
Maximum Emitter-Base Vo.8 V
Min hFE100
Oper. Temp (?C) Max.140
Pinout Equivalence Numb.3-15
PolarityPNP
SKU585830
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.45M
Transition Frequency (f.50 MHz
TypeTransistor Silicon PNP
Vbr CBO50
Vbr CEO20
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