Attributes

Key Value
Base Product NumberSPA04N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.5A (Tc)
DescriptionMOSFET N-CH 650V 4.5A T.
Detailed DescriptionN-Channel 650 V 4.5A (T.
Digi-Key Part NumberSPA04N60C3XKSA1-ND
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .25 nC @ 10 V
Input Capacitance (Ciss.490 pF @ 25 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.SPA04N60C3XKSA1
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)31W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs950mOhm @ 2.8A, 10V
SeriesCoolMOS?
Supplier Device PackagePG-TO220-3-31
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.9V @ 200?A
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