Vishay Siliconix SI4456DY-T1-GE3

mpnSI4456DY-T1-GE3
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Current - Continuous Dr.	33A (Tc)
Drain to Source Voltage.	40 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	122 nC @ 10 V
Input Capacitance (Ciss.	5670 pF @ 20 V
Mfr	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm .
Part Status	-
Power Dissipation (Max)	3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.8V @ 250?A

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