Attributes

Key Value
@Ic (test) (A)10m
@VCE (V)5
CaseSOT32
Collector Capacitance (.3.5 pF
Derate Above 25?C8m
Forward Current Transfe.100
Ic Max. (A)50m
Icbo Max. @Vcb Max. (A)10u
ManufacturerHitachi
Max. hFE200
Max. Operating Junction.175 ?C
Max. PD (W)1
Maximum Collector Curre.0.05 A
Maximum Collector Power.1 W
Maximum Collector-Base .180 V
Maximum Collector-Emitt.120 V
Min hFE100
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-10
PolarityNPN
SKU543155
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.140M
Transition Frequency (f.140 MHz
TypeTransistor Silicon NPN
Vbr CBO180
Vbr CEO120
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