Infineon Technologies IRF6665TR1PBF

mpnIRF6665TR1PBF
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	4.2A (Ta), 19A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	13 nC @ 10 V
Input Capacitance (Ciss.	530 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	DirectFET? Isometric SH
Part Status	Obsolete
Power Dissipation (Max)	2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs	62mOhm @ 5A, 10V
Series	HEXFET?
Supplier Device Package	DIRECTFET? SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 250?A

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