Attributes

Key Value
Base Product NumberAPTM50
CategoryDiscrete Semiconductor .
Current - Continuous Dr.51A
Drain to Source Voltage.500V
FET FeatureStandard
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) .140nC @ 10V
Input Capacitance (Ciss.7000pF @ 25V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageBulk
Package / CaseSP3
Part StatusActive
Power - Max390W
Rds On (Max) @ Id, Vgs78mOhm @ 25.5A, 10V
Series-
Supplier Device PackageSP3
Vgs(th) (Max) @ Id5V @ 2.5mA
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