Attributes

Key Value
Base Product NumberSTB6N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.5A (Tc)
Drain to Source Voltage.525 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .26 nC @ 10 V
Input Capacitance (Ciss.670 pF @ 50 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)70W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.5A, 10V
SeriesSuperMESH3?
Supplier Device PackageD?PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 50?A
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