Vishay Siliconix IRF640LPBF

mpnIRF640LPBF
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	18A (Tc)
Drain to Source Voltage.	200 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	70 nC @ 10 V
Input Capacitance (Ciss.	1300 pF @ 25 V
Mfr	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I?.
Part Status	Obsolete
Power Dissipation (Max)	3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Series	-
Supplier Device Package	TO-262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 250?A

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