Attributes

Key Value
Base Product NumberSIJ470
CategoryDiscrete Semiconductor .
Current - Continuous Dr.58.8A (Tc)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .7.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .56 nC @ 10 V
Input Capacitance (Ciss.2050 pF @ 50 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? SO-8
Part StatusActive
Power Dissipation (Max)5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs9.1mOhm @ 20A, 10V
SeriesThunderFET?
Supplier Device PackagePowerPAK? SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3.5V @ 250?A
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