mpn
BSC011N03LSATMA1
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
37A (Ta), 100A (Tc)
Drain to Source Voltage.
30V
Drive Voltage (Max Rds .
4.5V, 10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
72nC @ 10V
Input Capacitance (Ciss.
4700pF @ 15V
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 150?C (TJ)
Package
Tape & Reel (TR)
Package / Case
8-PowerTDFN
Part Status
Active
Power Dissipation (Max)
2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs
1.1mOhm @ 30A, 10V
Series
OptiMOS?
Supplier Device Package
PG-TDSON-8-1
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
2.2V @ 250?A