mpn
IRF1104L
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Category
Discrete Semiconductor .
Current - Continuous Dr.
100A (Tc)
Drain to Source Voltage.
40 V
Drive Voltage (Max Rds .
10V
FET Feature
-
FET Type
N-Channel
Gate Charge (Qg) (Max) .
93 nC @ 10 V
Input Capacitance (Ciss.
2900 pF @ 25 V
Mfr
Infineon Technologies
Mounting Type
Through Hole
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tube
Package / Case
TO-262-3 Long Leads, I?.
Power Dissipation (Max)
2.4W (Ta), 170W (Tc)
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
9mOhm @ 60A, 10V
Series
HEXFET?
Supplier Device Package
TO-262
Technology
MOSFET (Metal Oxide)
Vgs (Max)
?20V
Vgs(th) (Max) @ Id
4V @ 250?A