Attributes

Key Value
@Ic (test) (A)1.0
@VCE (V)5.0
CaseTO3
Derate Above 25?C800m
Forward Current Transfe.320
Ic Max. (A)12
Icbo Max. @Vcb Max. (A)100u
ManufacturerSanyo Semiconductor
Max. hFE320
Max. Operating Junction.125 ?C
Max. PD (W)100
Maximum Collector Curre.12 A
Maximum Collector Power.100 W
Maximum Collector-Base .180 V
Maximum Collector-Emitt.160 V
Maximum Emitter-Base Vo.6 V
Min hFE40
Oper. Temp (?C) Max.140
Pinout Equivalence Numb.3-14
PolarityNPN
SKU346109
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.15M
Transition Frequency (f.7.5 MHz
TypeTransistor Silicon NPN
Vbr CBO180
Vbr CEO160
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