Attributes

Key Value
@Ic (test) (A)500m
@VCE (V)2.0
CaseSOT32
Collector Capacitance (.62 pF
Derate (Amb) (W/?C)12m
Forward Current Transfe.120
Ic Max. (A)5.0
Icbo Max. @Vcb Max. (A)100u
ManufacturerToshiba
Max. hFE320
Max. Operating Junction.150 ?C
Max. PD (W)1.5
Maximum Collector Curre.5 A
Maximum Collector Power.10 W
Maximum Collector-Base .35 V
Maximum Collector-Emitt.20 V
Maximum Emitter-Base Vo.8 V
Min hFE160
Oper. Temp (?C) Max.140
Pinout Equivalence Numb.3-10
PolarityPNP
SKU585836
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.170M
Transition Frequency (f.170 MHz
TypeTransistor Silicon PNP
Vbr CBO35
Vbr CEO20
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