Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.22A (Tc)
Drain to Source Voltage.30V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .14nC @ 10V
Input Capacitance (Ciss.980pF @ 25V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I?.
Part StatusObsolete
Power Dissipation (Max)31W (Tc)
Rds On (Max) @ Id, Vgs14.9mOhm @ 22A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id2.2V @ 10?A
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