Attributes

Key Value
Base Product NumberSTH250
CategoryDiscrete Semiconductor .
Current - Continuous Dr.180A (Tc)
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .100 nC @ 10 V
Input Capacitance (Ciss.6800 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-7, D?Pak (6 Lead.
Part StatusObsolete
Power Dissipation (Max)300W (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 60A, 10V
SeriesSTripFET? III
Supplier Device PackageH?PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1760114244.7315