Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.13A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .64 nC @ 10 V
Input Capacitance (Ciss.1205 pF @ 100 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)147W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs309mOhm @ 7A, 10V
SeriesE
Supplier Device PackageTO-220 Full Pack
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
prev


As an Amazon Associate I earn from qualifying purchases.

1760116145.1347