IXYS IXTR200N10P

mpnIXTR200N10P
brandname: IXYS
manufacturername: IXYS

Attributes

Key	Value
Base Product Number	IXTR200
Category	Discrete Semiconductor .
Current - Continuous Dr.	120A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	235 nC @ 10 V
Input Capacitance (Ciss.	7600 pF @ 25 V
Mfr	IXYS
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tube
Package / Case	TO-247-3
Part Status	Active
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	8mOhm @ 60A, 10V
Series	Polar
Supplier Device Package	ISOPLUS247?
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	5V @ 500?A

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